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Abstract
Energy efficiency is a key requirement in the design of amplifiers for modern wireless applications. The use of quasi-floating gate (QFG) transistors is a very convenient approach to achieve such energy efficiency. We illustrate different QFG circuit design techniques aimed to implement low-voltage, energy-efficient class AB amplifiers. A new super class AB QFG amplifier is presented as a design example, including some of the techniques described. The amplifier has been fabricated in a 130 nm CMOS test chip prototype. Measurement results confirm that low-voltage, ultra-low-power amplifiers can be designed, preserving, at the same time, excellent small-signal and large-signal performance.
Highlights
Today, we are facing significant challenges in the design of electronic circuits
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Note that the quasi-floating gate (QFG) technique allows an optimal implementation of the floating battery, since it does not influence the biasing of the NMOS transistor, which is set by a matched diode-connected transistor, as in a class A topology
Summary
We are facing significant challenges in the design of electronic circuits. Many emerging wireless connectivity and Internet of Things edge computing applications require ultra-low-power wireless devices providing high performance in both indoor and outdoor environments. The QFG technique allows independent control of static and dynamic operation of the transistor by using separate input terminals for DC bias and AC signals This allows overcoming the tradeoff between dynamic performance and quiescent power consumption of class A topologies.
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