Energy distribution of slow trapping states in metal-oxide-semiconductor devices after Fowler–Nordheim injection

Abstract

Slow trapping charges in metal-oxide-semiconductor capacitors resulting from Fowler–Nordheim injection are investigated by an improved static capacitance method which provides direct experimental evidence for slow charging traps and their energy distribution. After the initial clearing of charges directly caused by the stress condition, a significant amount of slow traps are left which can be charged and discharged by alternating the gate bias. The number of trap sites is found to slightly decrease during repeated charging and discharging. The prominent peak of slow traps is energetically located around that of conventional interface traps, indicating a close correlation of both types of traps.