Abstract
We have investigated the generation of interface traps during 60Co irradiation and Fowler-Nordheim (FN) injection in MOS structures with thin plasma nitrided gate oxides. By using deep level transient spectroscopy and capacitance-voltage measurements, we have studied the impact of nitridation time on the creation of fast and slow states in the silicon bandgap. After FN injection, electrical relaxation of the interface has been interpreted as the superposition of two mechanisms: an irreversible physico-chemical time-dependent transformation and a reversible bias-dependent neutralization.
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