Abstract
The parameters related to the localized states in green-emitting indium gallium nitride (InGaN) have been evaluated by considering the energy diagrams derived by five different methods: (1) the exponential tail of the low-energy side of photoluminescence (PL) spectra, (2) the photon energy dependence of PL decay time, (3) excitation energy dependence of the PL peak energy, (4) the PL excitation spectrum, and (5) the temperature dependence of PL peak energy. The results indicate that the energy diagram of InGaN is divided into four regions: deep localized states, migration region, transition region, and extended states. It is suggested that wider localized states and a narrower transition region are preferable in order to achieve higher PL efficiency. In addition, the dependence of carrier density on PL properties supports the fact of photo-generated carriers forming localized excitons in green-emitting InGaN, although the carriers do not form localized excitons in orange-emitting InGaN and instead exist as localized electrons and holes.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
