Energy Band Structure and Optical Properties of Wurtzite‐Structure Silicon Carbide Crystals

Abstract

AbstractThe electroreflection spectra of hexagonal polytypes of SiC, 4H and 6H are measured in the range 1.0 to 5.6 eV. The energies of direct optical transitions are determined using a multiple oscillator model. The electronic band structures of three hexagonal polytypes of SiC (2H, 4H, and 6H) are calculated by the first‐principles self‐consistent linear muffin‐tin orbital (LMTO ASA) method. One‐electron energies and densities of states are obtained in the range ± 15 eV around the top of valence band. The results calculated are compared with experimental data measured in this work and those available in the literature.