Electronic band structure and optical properties of cubic silicon carbide crystals

Abstract

The electroreflectance spectra of cubic silicon carbide crystals are measured in the range 1.0 to 5.6 eV. The energies of direct optical transitions are determined using a multiple oscillator model. The electronic band structure and optical functions of 3C-SiC crystals are calculated by semiempirical pseudopotential methods. From comparison between theoretical and experimental optical spectra numerical parameters of electronic band structure 3C-SiC are obtained, and values of atomic form factors of carbon atoms, giving the realistic band structure and optical spectra of 3C-SiC, are determined.