Abstract
We report energetics and scanning tunneling microscopy (STM) images of boron and nitrogen defects in bilayer graphene using a first-principles density-functional study. It is found that the formation energies of N-doped AB-stacked bilayer graphene depend on the substitution sites, while those of B-doped one possess almost the same values without depending on the substitution sites. The STM images of B and N defects in not only AB-stacked but also AA-stacked bilayer graphene are calculated. The STM images near B and N defects in upper layers of AA- as well as AB-stacked bilayer graphenes are found to be similar to each other, whereas those of undoped lower layers show different images.
Published Version
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