Abstract

Filtered cathodic arc deposition of fully ionized boron (B) was used to fill ∼2 μm wide trenches in silicon, having a depth:width ratio of up to 3:1. Optimal, void-free, infill is achieved with proper balance between deposition and self-sputtering, as controlled by the substrate bias. Previously, this technique was used to fill similar trenches with copper [O. R. Monteiro, J. Vac. Sci. Technol. B 17, 1094 (1999)]. In this work, successful extension of this process to B was found to require up to ten times higher bias voltage (up to 1000 V) for the sputtering phase and to benefit from a stronger angular dependence of self-sputtering yield for this lighter element.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.