Abstract

Tantalum (Ta) films of about 100nm in thickness were fabricated onto Ti6Al4V substrate using a filtered cathodic vacuum arc deposition system with and without a −100V bias between the substrate and the chamber wall. The structure of the deposited film at zero substrate bias exhibits pure tetragonal phase (beta-Ta), and body-centred cubic structure (alpha-Ta) is found as the substrate bias increased to −100V. The film deposited at −100V bias shows a significant improvement in cohesion as compared to the film deposited without substrate bias. Potentiodynamic polarization and electrochemical impedance tests in phosphate buffered saline solution revealed that the Ta film at −100V bias shows good corrosion resistance with a low corrosion current density of 0.009μA·cm−2. The film shows hydrophobic characteristics, low surface free energy and an inert surface presenting a uniform oxide layer, which is promising for potential biomedical implant applications.

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