Abstract
Micro-electromechanical systems (MEMs) started to dominate the interests of the industry due to the high growth of the various radio frequency (RF) systems, such as mobile telecommunication, satellite communication and other wireless devices that accrues high frequency range. In addition to the race of miniaturizing the device feature size. However, the main obstacle of enabling such devices is that not all of the MEMS technologies are compatible with integrated circuits (IC) manufacturing process. MEMs' devices that are based on acoustics waves like surface acoustic wave (SAW) and bulk acoustic wave (BAW) overcome aforementioned limitations while providing an outstanding performance. BAW resonator is a new technology raised during the last decade which shows better temperature stability compared to SAW, better selectivity, IC manufacturing process compatibility, and lower insertion loss. Filters based on BAWs show very promising results as well. However, BAW resonators still need optimization to achieve the high-quality factor also the temperature dependency is still a big problem. A novel Thin Film bulk acoustic resonator (FBAR) design is presented in this paper using aluminum nitride (AlN) as peizoelectric material and Tungsten (W) for the electrodes, with detailed electrical model and FEM simulations using COMSOL MULTIPHYSICS. In addition, Cadence Virtuoso is used to implement and simulate the electrical model. A resonance frequency of 2.4 GHZ is achieved with quality factor (QF) of 1548 and Temperature coefficient of frequency (TCF) ∼ 4.6 (ppm/ oC).
Published Version
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