Enabling low power and high speed OEICs: First monolithic integration of InGaAs n-FETs and lasers on Si substrate

Abstract

We report the first monolithic integration of InGaAs channel transistors with lasers on a Si substrate, achieving a milestone in the direction of enabling low power and high speed opto-electronic integrated circuits (OEICs). The III-V layers for realizing transistors and lasers were grown epitaxially on the Si substrate using MBE. InGaAs n-FETs with I on /I off ratio of more than 106 and very low off-state leakage current were realized. In addition, fabrication process with a low overall processing temperature (≤ 400 °C) was used to realize electrically-pumped GaAs/AlGaAs quantum well (QW) lasers with a lasing wavelength of 795 nm and a linewidth of less than 0.5 nm at room temperature.