Light emitting diodes based on GaPN/Si for optoelectronic integrated circuits

Abstract

We have tried to monolithically merge light emitting devices into Si large-scale integrated circuits in a single chip for realization of optoelectronic integrated circuits (OEICs). OEICs could be realized for parallel information processing, optical interconnection and other applications. Structural defect-free GaPN and InGaPN layers were grown on a Si (100) substrate by using migration enhanced epitaxy and molecular beam epitaxy. A dislocation-free Si/GaPN/Si structure, which is a basic structure for OEICs, was successfully grown as well. In addition, control of electron and hole concentrations in GaPN was achieved by S(or Te)- and Mg-doping, respectively. Subsequently, a lattice-matched InGaPN/GaPN double-heterostructure (DH) light emitting diode (LED) was realized on a Si substrate. Moreover, fabrication process flow for OEIC was developed and applied to a Si/InGaPN/GaPN DH LED/Si layers. As a result, LEDs and metal-oxide-semiconductor field effect transistors were monolithically integrated in a single chip for the first time. When the luminescence efficiency is improved and micro-size LEDs based on GaPN are developed, novel OEICs would be realized.