Emulation of novel floating and tunable Multimem-Elements circuit and its application

Abstract

The research proposes a relatively modest dual memelement function simulator based on active building blocks (ABB) such as a Voltage Differencing Inverting Buffered Amplifier (VDIBA), dual output second generation current conveyors (DO-CCII), two MOSFETs, and two grounded passive components. The challenge of physically realizing mem-elements is an open issue that encourages the development of newer concepts. All three memelements emulators namely memristor, memcapacitor-dual, and meminductor can be obtained from the proposed Multimem-element architecture by changing one impedance of the circuit as resistor, capacitor, or inductor. However, the presented circuit design does not involve any switches to achieve the other memelement. The multimem-element emulator (MME) that has been suggested has the capacity for nonvolatile storage and can be electrically tuned to its maximum potential. Additionally, the emulator can demonstrate memristor response up to the MHz frequency range. The PSPICE-generated simulation results for realizing all three aspects in 0.18 μm CMOS technology node confirm the functionality of the suggested floating MME. In addition to its CMOS-based architecture, the demonstrated MME is validated via implementation using commercial ICs. The operation of the provided MME may be seen by the application examples that are given, which include a chaotic circuit and an adaptive learning circuit respectively.