Abstract
A method is proposed to obtain closed-form empirical formulas to calculate the effective dielectric constant, the attenuation constant and the characteristic impedance of a microstrip line on an Si-SiO2 structure for varying strip width and frequency. The formulas are valid in both the slow-wave mode (low frequency) and the skin-effect mode (high frequency). The dielectric mode is not taken into account. For strip widths varying from 30 µm to 80 µm, high accuracy was obtained.
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