Emitter resistance of arsenic- and phosphorus-doped polysilicon emitter transistors

Abstract

Measurements of emitter resistance have been made on arsenic- and phosphorus-doped polysilicon emitter bipolar transistors, fabricated with or without an interfacial oxide layer. It is found that the emitter resistance of phosphorus-doped transistors is considerably lower than that of arsenic-doped transistors. In addition the presence of a deliberately grown interfacial oxide layer leads to a significant increase in emitter resistance for both arsenic- and phosphorus-doped devices.