Abstract
This paper presents detailed results from noise measurements on fast pre-amplifiers for wire chamber applications. Emitter followers and source followers are compared with the well-known and widely-used common base amplifiers. The measurements show that for detectors with small stray capacitance (≤ 20pF) emitter followers and source followers give better results than common base amplifiers. Equivalent input noise charges as low as 260 electrons rms have been achieved with a gallium arsenide transistor used as a source follower (shaping time 18 ns). This value is lower by about a factor of 5 than that for a common base amplifier. Also bipolar transistors as emitter followers give good results (600 to 800 electrons rms).
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