Abstract
We report the selective-area growth of a gallium nitride (GaN)-nanorod-based InGaN/GaN multiple-quantum-well (MQW) core-shell structure embedded in a three-dimensional (3D) light-emitting diode (LED) grown by metalorganic chemical vapor deposition (MOCVD) and its optical analysis. High-resolution transmission electron microscopy (HR-TEM) observation revealed the high quality of the GaN nanorods and the position dependence of the structural properties of the InGaN/GaN MQWs on multiple facets. The excitation and temperature dependences of photoluminescence (PL) revealed the m-plane emission behaviors of the InGaN/GaN core-shell nanorods. The electroluminescence (EL) of the InGaN/GaN core-shell-nanorod-embedded 3D LED changed color from green to blue with increasing injection current. This phenomenon was mainly due to the energy gradient and deep localization of the indium in the selectively grown InGaN/GaN core-shell MQWs on the 3D architecture.
Highlights
III-nitride-based materials are a promising source of energy-saving solid-state lighting, for lightemitting diodes (LEDs)
Preparation of Pattern A 3-μm-thick gallium nitride (GaN) epilayer with a (0002) preferential orientation doped with Si was utilized as a basal template for the selective-area growth (SAG) of GaN NRs by metalorganic chemical vapor deposition (MOCVD)
A detailed structural analysis based on our TEM investigation is given later
Summary
III-nitride-based materials are a promising source of energy-saving solid-state lighting, for lightemitting diodes (LEDs). Considerable improvements in the performance of LED devices have been demonstrated, c-plane polar gallium nitride (GaN)-based LEDs still have unsolved problems that adversely affect their performance, which are caused by piezoelectric and spontaneous polarization [3, 4] To solve such problems, different crystal planes, nonpolar facets such as the m- and a-planes, Jung et al Nanoscale Research Letters (2016) 11:215 by geometrically emissive color mixing or phosphorbased wavelength conversion [7, 10,11,12]. NR-based 3D LEDs inevitably include several crystal facets, in contrast to a planar epilayer This strongly affects the light emission properties of coreshell MQWs such as spectrum broadening and indium localization, thereby making it necessary to study their optical properties in more detail [15, 16]. The light emission properties of the core-shell-NRembedded 3D LEDs are presented in detail
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