Abstract
GaN-based vertical-cavity surface-emitting lasers (VCSELs) with high optical gain and short cavity lifetime are favorable for the generation of ultra-short pulses in the blue and green regions. In our previous works, 6 and 2 picosecond short-pulses have been generated from gain-switched InGaN VCSELs with 3- and 10-period InGaN/GaN quantum wells (QWs) in the active layers by using an up-conversion measurement system. To further increase the gain of the VCSEL for the generation of even shorter pulses, 20-period InGaN/GaN QWs samples were fabricated. The emission characteristics of these high-gain VCSELs were investigated and analyzed under the optical pumping at room temperature.
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