Abstract
AbstractBy introducing antimony during the growth of InAs/GaAs quantum dots (QDs) by metalorganic chemical vapor deposition, we have achieved ground‐state emission at 1.55 µm (and beyond) from InAs/GaAs QDs capped by an In0.24Ga0.76As strain‐reducing layer (SRL) at room temperature (RT). We show that antimony irradiation results in the formation of QD sub‐ensembles. Photoluminescence intensity is strongly enhanced (×100) at RT compared to Sb‐free QDs capped by higher In‐content SRL in which ground‐state emission saturates at wavelengths shorter than 1.51 µm. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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