Formation of m-plane InGaN/GaN quantum dots using strain engineering of AlGaN/AlN interlayers

Abstract

We demonstrate the growth of m-plane InGaN/GaN quantum dots by metalorganic chemical vapor deposition. Formation of the InGaN quantum dots on the GaN layer is achieved only when AlGaN/AlN interlayers are deposited prior to the GaN layer. Structural analysis shows that the AlGaN/AlN layers which introduce a compressive strain for the GaN layer play a crucial role in the formation of the quantum dots. The strong photoluminescence emission observed at room temperature as well as the reduction of quantum confinement Stark effect in the m-plane InGaN quantum dots opens the possibility of using such systems as efficient single photon sources.