Abstract
Two-dimensional (2D) materials are attracting explosive attention for their intriguing potential in versatile applications, covering optoelectronics, electronics, sensors, etc. An attractive merit of 2D materials is their viable van der Waals (VdW) stacking in artificial sequence, thus forming different atomic arrangements in vertical direction and enabling unprecedented tailoring of material properties and device application. In this chapter, we summarize the latest progress in assembling VdW heterostructures for optoelectronic applications by beginning with the basic pick-transfer method for assembling 2D materials and then discussing the different combination of 2D materials of semiconductor, conductor, and insulator properties for various optoelectronic devices, e.g., photodiode, phototransistors, optical memories, etc.
Highlights
IntroductionSince the successful exfoliation of graphene [1], a group of materials with two-dimensional structures have revived and are attracting explosive interests from a variety of fields, including transistors [2], photodetectors [3], chemical sensors, memories, and artificial synapses [4, 5]
Since the successful exfoliation of graphene [1], a group of materials with two-dimensional structures have revived and are attracting explosive interests from a variety of fields, including transistors [2], photodetectors [3], chemical sensors, memories, and artificial synapses [4, 5]. This is benefited from the versatile properties, of 2D materials defined by their crystal structure (1 T, 2H, etc.) and by their layer number, i.e., the electrical conductivity and optical bandgaps [6]
In this chapter, we have introduced various types of 2D heterostructures for both photodetection and optoelectronic memory, both of which extensively take advantage of the feasible field-effect modulation to the optoelectronic properties of 2D materials
Summary
Since the successful exfoliation of graphene [1], a group of materials with two-dimensional structures have revived and are attracting explosive interests from a variety of fields, including transistors [2], photodetectors [3], chemical sensors, memories, and artificial synapses [4, 5]. The great flexibility in assembling 2D materials renders unprecedented opportunity in discovering novel nanoscale transport phenomenon [14] and carrier dynamics and stimulates the exploration of 2D functional devices via deliberately designing the heterostructures In optoelectronics, this enabled the tailoring of charge separation characteristics of photogenerated electron–hole pairs in semiconductors [15], thereby allowing innovated designs of heterostructured transistors [16, 17], tunneling diode for photodetection [18, 19], and further optoelectronic memories with float gate structures [20]. There is no more forbidden gap at the interface compared to the bulk semiconductor Such type III band alignment is useful in tunneling field-effect transistors with large current density [24]. The continuously increasing 2D material family incubates infinite possibilities in 2D heterostructures and extremely rich functions
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