Abstract

The energy level mismatching between SnO2 and perovskite and the nonradiative recombination at SnO2-perovskite interface severely degrade the extraction of carriers, reducing the power conversion efficiency (PCE) and stability of planar perovskite solar cells (PSCs) based on SnO2 electron transfer layer (ETL). In the present work, a reinforced SnO2 ETL was successfully developed by embedding SnO2 thin shell protected Ag nanowires (Ag/SnO2 NWs) in traditional planar SnO2 film, which was proved to not only lower the conduction band of SnO2 to adjust the energy level matching, but also significantly reduce the interfacial carrier recombination. Moreover, Ag/SnO2 NWs improved the electrical conductivity of SnO2 ETL, and effectively promoted carrier transport. Benefiting from the use of Ag/SnO2 NWs, our newly designed PSC achieved a significantly increased champion PCE of 19.78%, which is 7% higher than the traditional PSC without Ag/SnO2 NWs embedding, indicating its great application potential in PSCs.

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