Abstract

The power conversion efficiency of perovskite solar cells (PSCs) has rapidly increased for the past few years, which draw more attention of the researchers. Here we for the first time by introducing Nb2C MXenes as an external additive for SnO2 electron transfer layer (ETL), which leads an obvious growth of SnO2 grains. The atomic-resolution high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) revealed that the in-corporation of Nb2C MXenes can result the increased of lattice spacing facets of SnO2, which finally show an improved roughness, surface energy and defects of the SnO2-Nb2C based ETL compared with the control SnO2 film. The subsequent peroveskite films deposition on the SnO2-Nb2C ETL demonstrate a higher quality with superior crystalline and effective carrier transport. Therefore, we achieve a champion power conversion efficiency of 22.86% for PSCs based on SnO2-Nb2C ETL from 18.96% of the control devices, and these target devices remain 98% of the origin efficiencies after 40 days at 25 °C under the 40–60% humidity. This work offers an insight into the design and preparation of a modified electron transfer layer for boosting power conversion efficiency and long-time stability of perovskite solar cells as well as the other perovskite-based photoelectric conversion electronic devices.

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