Abstract
Micro embedded ring resonator electro-optic switching in InGaAsP based quantum well structures is briefly reviewed and all optic switching is presented. A 20Gbps electro-optic modulator with >12dB extinction ratio has been proposed using quantum confined stark effect tuning, for which a novel high speed coplanar-microstrip inverted ground plane transition has also been designed. All optical tuning is used to theoretically demonstrate a 20G packets/s switching with a 5dB switching ratio. The fabricated micro embedded ring resonator ring using e-beam lithography and Al lift off mask has been demonstrated and the measured device spectrum is found to match well with the simulated results.
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