Abstract
We experimentally demonstrate an integrated strictly non-blocking silicon 4 × 4 optical switch chip that can be operated in both thermo-optic (TO) and electro-optic (EO) switching modes. It is based on the double-layer network (DLN) architecture and consists of twelve 2 × 2 Mach-Zehnder interferometer (MZI) switch elements. TO phase shifters based on TiN microheaters and EO phase shifters based on p-i-n diodes are embedded in both waveguide arms of the MZI elements. The power consumption for TO and EO switching is 34 mW/π and 7 mW/π, respectively. The on-chip insertion losses are 1.74 ± 0.59 dB and 3.79 dB ± 1.32 dB for TO and EO switching, respectively. Due to the merits of the DLN architecture and the optimized performance of the switch elements, the chip possesses low crosstalk of -29.1 dB and -19.4 dB for TO and EO switching, respectively. Quadrature phase-shift keying (QPSK) optical signals with a data rate of 64 Gb/s are transmitted through the switch with no observable deteriorations. Such an optical switch is a promising candidate for both optical circuit switching and optical packet switching for a variety of applications.
Highlights
Integrated large-port-count optical switches are highly demanded to enable sustainable growth of diverse optical transmission networks from long-haul to short-reach distance scales, which can greatly expand network bandwidth and reduce electrical power consumption [1]–[3]
We experimentally demonstrate an integrated strictly non-blocking silicon 4 × 4 optical switch chip that can be operated in both thermo-optic (TO) and electro-optic (EO) switching modes
Silicon photonics has the advantages of compact size due to its large refractive index contrast, and low cost for the complementary metal-oxide-semiconductor (CMOS) compatible manufacturing processes, which are favorable for large-scale optical switches
Summary
Integrated large-port-count optical switches are highly demanded to enable sustainable growth of diverse optical transmission networks from long-haul to short-reach distance scales, which can greatly expand network bandwidth and reduce electrical power consumption [1]–[3]. The switching speed of MEMS and TO based optical switches is in the order of microseconds, while EO actuated switches based on the free-carrier dispersion effect have a faster response time of nanoseconds. Optical switches with microsecond and nanosecond reconfiguration time are both required for various applications. In data center applications, hybrid networks composed of optical-circuit/electrical-packet switching are proposed by researchers. The optical circuit switching is used to handle the more diverse workload and exist closer to the end hosts, in which microsecond-scale reconfiguration time is required [22]. High-speed data transmission experiments are performed to verify the routing capability of the proposed switch Such a silicon optical switch chip capable of switching in both microsecond and nanosecond response times has wider and more flexible applications in various fields. The operation mode can be switched according to the practical requirements
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