Abstract
Low-k, carbon-rich SiCxNy films for diffusion barrier applications have been fabricated by plasma-enhanced chemical vapor deposition (PECVD) using silazanes as the single-source precursor. Linear and cyclic silazane precursors with vinyl groups yield SiCxNy films with carbon bridges, namely ethylene bridges (Si–CH2–CH2–Si) and methylene bridges (Si–CH2–Si), which are readily formed and embedded with the Si–N(–C) matrix. A SiCxNy film of low k = 3.2 is achieved by successful incorporation of ethylene bridge embedded within the Si–N(–Cx) network by using a linear silazane precursor. Also, for these silazanes-deposited SiCxNy films at a fixed dielectric constant below 4.2, cyclic silazane, VSZ (1,3,5-trimethyl-1,3,5-trivinylcyclotrisilazane) produces films of higher film density and modulus, compared to those by a linear silazane precursor.
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