Abstract
The formation and evolution of Si nuclei on the Si(100) surface at 600 and 700 °C were observed in a microwave electron cyclotron resonance plasma chemical vapor deposition system, using both real-time in situ single wavelength and spectroscopic ellipsometry combined with high-resolution cross-sectional transmission electron microscopy and secondary ion mass spectroscopy. The deposited Si layers are epitaxial, and decidedly different nucleation behavior is seen at 600 and 700 °C. The experimental ellipsometry results were compared with simulations and the results show that temperature has a profound effect on the initial nucleation and growth, and the different interface structures that are observed are attributable to impurities.
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