Abstract
The preparation of {100} InP surfaces by chemical cleaning followed by a heating up to 700°C inside a reactor is studied by spectrometric ellipsometry. The surface state of reference is determined with respect to the contaminated surface. Ellipsometry spectra enabled us to follow the annealing as a function of temperature and partial pressure of phosphine. Indium droplets and deposition of a phosphorous compound was observed. The experimental conditions which enable one to have a surface without defects before growth, were determined. A thermodynamic study of the equilibrium between surface and phosphorus species of the vapour phase, gives the lowest value of phosphine pressure necessary to prevent indium condensation. The results obtained are in agreement with the experimental results. Moreover this study points out that a P 2 adsorption rather than a P adsorption is expected on the surface.
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