Abstract
Using multiple incident angle ellipsometry, the complex refractive index and the thickness of the damaged layer formed by SiO2 sputtering deposition were determined. An analysis of a least-squares fit of the experimental values Δi and \\varPsii to the theoretical results is carried out in three steps, where Δi and \\varPsii are the phase change and the azimuth, respectively, at an angle of incidence φi. It is found that a point several hundreds of angstroms from the surface is damaged even though the thickness of the deposited film is only some tens of angstroms. The change in the complex refractive index nd–jkd and the thickness td of the damaged layer does not depend on the deposition time, but these quantities increase with increasing sputtering power. Typical values for nd–jkd and td are 3.684–0.389j and 640 Å, respectively at a sputtering power of 300 W.
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