Abstract
Silicon nitride thin films were deposited by plasma enhanced chemical vapor deposition on In0.53Ga0.47As (001) surfaces with and without NH3 pre-deposition treatments. The influence of the NH3 pre-deposition treatments on the electrical properties of the Si3N4/In0.53Ga0.47As interface was investigated by frequency dependent capacitance-voltage and conductance-voltage measurements. A fully unpinned C-V behavior was obtained for all samples. Samples that underwent NH3 pre-deposition treatment exhibited electrical characteristics with no evidence of the midgap interface states (Dit) effects in weak inversion, which are reported in the literature on In0.53Ga0.47As capacitors.
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