Abstract
Multilevel metal (MLM) structures utilizing four layers of large grain size Al 1.5% Cu metallization have displayed `in process' stress voiding in metal layers two through four upon completion of final passivation and anneal. Changing the deposited dielectric stress from 2E8 dynes/cm2 to a slightly more compressive 1.25E9 dynes/cm2 eliminated the formation of `in process' stress voids. However, thermal stressing at 200 degree(s)C still produced stress voiding in metal layers two and three. The addition of a 125 angstrom TiW cap to the second, third, and fourth metal layer was shown to eliminate both `in process' stress voids and long term 200 degree(s)C thermal stress induced metal line voids on all material with standard dielectric thicknesses. The results comparing various dielectric stress levels and metal structures with and without a TiW cap are reported here.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.