Abstract
Decreasing field oxide thickness or (and) increasing field oxidation temperature up to 1100°C, in a polybuffered local oxidation of silicon (PBL) isolation scheme, has a positive impact on field oxide thinning in small spacings, stress‐induced voiding in small active areas, as well as on 5 nm thin gate oxide QBD. A low field oxide thickness and a high temperature field oxidation enable the use of 0.7 μm pitch PBL for sub‐0.25 μm complementary metal oxide semiconductor designs. The transition of the bird's beak growth from a direct oxidation to a diffusion limited mechanism is consistent with the evolution of stress in the middle of active area as a function of field oxide thickness or field oxidation temperature.
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