Abstract
Fluorine-doped silicon oxide (SiOF) as intermetal dielectric (IMD) layer was deposited by conventional plasma-enhanced chemical vapor deposition (CVD). The main issues in the application of SiOF as IMD are as follows: (1) instability of film properties such as stress and refractive index during HTS test, (2) desorption of H2O and HF gases from SiOF film, (3) increase of line resistance, (4) wedgelike defects of metal lines, and (5) via resistance degradation during HTS test at 350°C. The above problems in use of SiOF as IMD can be eliminated by the passivation of IMD with PE-SiN and the application of Ti underlayer before the second metal deposition.
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