Abstract
We propose a practical way to control WSix peeling in a polycide process by ion implantation of WSix. The WSix film stress decreases one to two orders of magnitude due to film amorphization by implantation. The implant steps in the polycide process can be used to alleviate the accumulation of the WSix film stress. By replacing diffusion with implantation for polygate doping and modifying topological layout design rule to prohibit unimplanted polygate, WSix peeling in a polycide process is completely eliminated.
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