Critical currents density and current loops range in MgB 2 thin layers obtained by the technique of ions implantation followed by pulsed plasma transient annealing

Abstract

We report on the measurements of transport and magnetic properties of MgB 2 thin films obtained using ion implantation technique followed by irradiation with high intensity pulsed plasma beams. To get detailed information about the process of current percolation in a superconducting phase, about current transport and size of the current loop, we used the method of reverse leg of magnetisation loop. On the basis of this method we have found that the technique of implantation allowed one to obtain a continuous layer of MgB 2 superconductor characterized by the critical current density of J c = 1.25 × 10 5 A/cm 2.