Abstract
This paper presents an analytical model for intrinsic short-circuit admittance (Y) parameters of DH-DD-TM-SG MOSFET. Y parameters have been modeled using different small-signal equivalent circuit parameter which is used to find the Scattering parameters. These Y parameters have further been employed for computing S-parameters. These parameters are further used to investigate the microwave performance parameters of the proposed device. The Unilateral Power Gain and the maximum oscillation frequency is determined to evaluatethe microwave performance. The proposed device shows a higher cut-off frequency (f_T) and maximum oscillation frequency as to TM-SG MOSFET. The proposed device exhibits a 4.2% improvement in U_T 2.81% in G_ms and 6.9% improvement in G_MTPG as compared to TMSG. The analytical result of DH-DD-TM-SG MOSFET is in accordance with the simulated results.
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