Elemental Redistribution During the Crystallization of Ge–Cu–Te Thin Films for Phase-Change Memory

Abstract

Herein, a GeCu2Te2 alloy is proposed as a phase-change material for application in nonvolatile phase-change random access memory (PRAM). The crystallization kinetics and microchemical changes during phase transformation are investigated, and their correlation with the electrical behaviors of the GeCu2Te2 thin films are examined. The key findings are as follows: (ⅰ) the GeCu2Te2 alloy shows a higher crystallization temperature (∼185 °C) than the classic Ge2Sb2Te5 (GST) thin films, thus demonstrating superior thermal stability; (ⅱ) the crystallization kinetics demonstrate a decreasing in the Avrami exponent n from 4, which is related to the growth-dominated crystallization process evidenced by the micromorphology; (ⅲ) a massive redistribution of the chemical elements along the depth of the thin films during crystallization is considered to be driven by selective surface oxidation at amorphous state, and stress buildup during crystallization. In addition, the crystallization-induced stress is determined as ∼168 MPa by utilizing the wafer curvature and X-ray diffraction methods for the GeCu2Te2 thin films. Finally, the lower threshold switching voltage ∼1.72 V for amorphous GeCu2Te2 thin films is beneficial for reducing the SET operating power consumption. The authors believe that these results are valuable for the optimal phase change material design.