Elemental boron and antimony doping of MBE Si and SiGe structures grown at temperatures below 600°C

Abstract

This paper considers the low temperature doping of (100) Si and SiGe structures with elemental B and Sb sources particularly with regard to obtaining very narrow delta doping spikes. B is found to be an excellent dopant at SiGe growth temperatures incorporating in an active state at concentrations up to 10%. B delta layers of 1 nm or less have also been grown. Sb is also shown to be capable of providing delta doped layers less than 2 nm wide. The B deltalayers have been incorporated into modulation doped structures yielding an order of magnitude increase in mobility at 77 K.