Abstract
A methodology for modeling and simulating the electrothermal behavior of power semiconductor switching devices is illustrated and validated. The electrothermal model is constructed using the bond graph formalism. This bond graph model is centered around the idea of having a single model regardless of the switch state. The electrothermal model describes the dynamic temperature distribution of the device from the chip surface through the package and heat sink, and the influence of the chip temperature variation on the electrical characteristics of the device.
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