Abstract
An electrochemical deposition procedure by cyclic voltammetry, in an electrolyte solution was adopted for the preparation of thin films of polypyrrole–gallium arsenide composite materials. The properties of the composite layers were studied by cyclic voltammetry, electrochemical impedance spectroscopy and photoelectrochemical measurements. The p- and n-type semiconductor behaviour of the polypyrrole (PPy) and gallium arsenide (GaAs) were studied by photocurrent measurements. It was found that the composite material (PPy–GaAs) had a (p–n) heterojunction behaviour.
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