Abstract
The chemical states of hydrogen in a zirconium oxide film were studied by photoelectrochemical (PEC) measurements and electrochemical impedance spectroscopy (EIS) measurements. The oxide films were prepared by the oxidation of a zirconium sheet (purity 99.7%) in air at 673 K for 18 h. In order to obtain a hydrogen-implanted oxide film, the oxide film was implanted with 100 keV H + ions to a dose of 10 17 cm −2 at room temperature. From the PEC measurements, the band gap energy for the hydrogen-free oxide film was determined to be about 4.8 eV and it was reduced to 3.5 eV by hydrogen implantation. The distribution of the carrier density in the band gap was obtained by EIS measurements using Mott–Schottky analysis. Hydrogen implanted into the oxide film caused the impurity level in the original band gap. This result was consistent with that of PEC measurements.
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