Abstract
We have performed ferroelectric field effect experiments using an epitaxial heterostructure composed of ferroelectric Pb(Zr0.2Ti0.8)O3 and superconducting Nb-doped SrTiO3. The films were prepared on (001) SrTiO3 substrates by off-axis radio-frequency magnetron sputtering and pulsed-laser deposition. By switching the polarization field of the 500-Å-thick Pb(Zr0.2Ti0.8)O3 layer, a large change of about 30% in resistivity and a 20% shift of Tc (ΔTc∼0.05 K) were induced in the 400-Å-thick epitaxial Nb-doped SrTiO3 layer. The relationship between Tc and the electrostatically modulated average carrier concentration can be mapped onto the phase diagram of chemically doped SrTiO3.
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