Abstract
A δ-doped stepped poly gate heterostructure metal oxide semiconductor field effect transistor (HMOSFET) has been analysed. The insertion of a δ-doped layer within the channel region of the proposed In0.53Ga0.47As/InP HMOSFET results in the reduction of short channel effects and the junction capacitance. In the proposed device, the split gate with dissimilar oxide thickness from the source end to drain end have p+ poly in first and third region whereas, n+ poly is in the second region. Further, the δ-doped layer within the channel in stepped poly gate HMOSFET significantly enhances the electrical characteristics of the device. Simulation results reveal that in comparison with stepped poly gate and conventional HMOSFET, δ-doped stepped poly gate HMOSFET gives improved electron transport phenomena and analog characteristics in terms of electron mobility, electric field, electron velocity, transconductance, On resistance, transconductance generation factor and switching ratio. Further, reduction in junction capacitance improves the radio frequency performance metrics in terms of cut-off frequency, maximum frequency and gain bandwidth product.
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