Electrostatic acceleration and deflection system for modification of semiconductor materials in laser-produced ion implantation

Abstract

To optimize the efficiency of laser ion implantation technology, it is advisable to properly select the laser beam characteristics (i.e. power density, target illumination geometry, etc.). In many applications, it is important to select a specific range of ion energy to implant the ions at a given depth and at a given density. To make it possible, the electrostatic system for acceleration and deflection of low-energy laser-produced ions can be used. This contribution provides a description of the experiments aimed at the implantation of Ge ions from a narrow energy band onto SiO2/Si substrates, which were conducted at IPPLM. As the source of irradiation, we used a Nd:YAG up to 10 Hz laser system with pulse duration of 3.5 ns and pulse energy ∼ 0.5 J, which gave a power density of 1010 W/cm2. The ion stream parameters were measured using the time-of-fight method. The laser-produced ions passing through the diaphragm have been accelerated in the system of electrodes. Due to the electrostatic field configuration provided by the electrode system and a diaphragm located at the axis of the system, the selected ions were focussed at the area of interest to increase implantation density. The accelerating voltage, the distance of the diaphragm from the target, the diaphragm diameter and the gap width between electrodes were changed for choosing the desired parameters of the ion stream.