Abstract
One-dimensional metal-oxide nanofibers show great promise as the basis for nano-device platforms due to their large surface to volume ratio and unique electrical properties. Here, we represent the facile fabrication of p-type CuO nanofibers utilizing the electrospinning technique for field-effect transistors (FETs), which incorporate CuO nanofibers as a channel and high-κ Al2O3 as a dielectric layer. The FETs exhibit typical p-type characteristics with a high hole mobility of 3.5 cm2/Vs at a low operating voltage of 4 V, fast switching speed, and modulation of light emission over the external light-emitting diode.
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