Abstract
Electroreflectance (ER) spectra of β-Ga2O3 were measured using Schottky barrier diodes. The ER spectra were well fitted to a third derivative line shape function by assuming three excitonic transitions. The transition energies exhibited moderate blueshifts with an external reverse bias by reflecting the contribution of transitions at M0 type critical points. Optical anisotropy was selectively observed in the polarized ER spectra. The fittings for the third derivative line shape function gave relatively large broadening parameters (0.11–0.89 eV) due mainly to the large exciton-longitudinal-optical-phonon interaction in β-Ga2O3. The ER spectra exhibited a third derivative line shape with a Franz-Keldysh oscillation superimposed on it. The results demonstrate that ER measurements are useful for investigating optical anisotropy in β-Ga2O3 and related alloys.
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