Abstract
Electroreflectance (ER) spectra were measured using the Schottky barrier diodes. The ER spectra were well fitted by three components of exciton lineshape functions. The transition energies exhibited moderate changes with the external reverse bias by reflecting the broadening of the absorption edge. The results demonstrate the ER measurement is applicable for Ga 2 O 3 and related alloys as a useful tool to investigate their band structure.
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