Abstract
Optical properties of an SiOx porous silicon (PS) interface,prepared by stain etching of the laser modified p-Si surface, wereinvestigated. The electroreflectance spectra (ERS) were measured in theregion of 3.0-3.8 eV. A correlation between the existence ofphotoluminescence (PL) and the polarity inversion of the ERS signal of PS,compared to the laser modified Si or PS samples without PL, isestablished. It is shown that PL appears due to the electron enrichment ofthe near interface region caused by the positive charge imbedded into theoxide layer. The transition energy experiences a red shift with theincreasing thickness of the oxide film. The intrinsic field between theoxide layer and Si increased with the ageing of the PS samples displayingPL. The results obtained support the surface localization model of PS PLcontrolled by the tunnelling mechanism of photocarriers through theSi/SiOx barrier.
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