Abstract
Polycrystalline CuIn0.95Ga0.05Se2 films are obtained by a two-step procedure of the controlled selenization of intermetallic CuIn0.95Ga0.05 layers. The effect of the selenization temperature and the selenized intermetallic-film thickness on the structure and electrophysical properties of the formed selenide films is studied. With an increase in the selenization temperature, the degree of imperfection of the polycrystalline films is shown to decrease and the efficiency of Ga incorporation into the crystal lattice is shown to increase. Based on the results of studying the electrophysical properties of synthesized samples, the nature of the microstructure effect on the current-transfer mechanisms in polycrystalline CuIn0.95Ga0.05Se2 films is discussed.
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