Abstract
The CuIn0.95Ga0.05Se2 films 0.6 – 1.5 μm thick have been prepared at selenization temperatures from 300°C to 500°C and studied by Raman spectroscopy methods. The interval of the selenization temperatures and the minimum thickness of the metal layer necessary for the preparation of a high-quality thin CuIn0.95Ga0.05Se2 film are established. It is shown that the CuIn0.95Ga0.05Se2 films prepared by the proposed technology can successfully be used as an active photosensitive layer of highly efficient solar radiation converters.
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